A multilayer structure which provides for optimization of a configuration of a
patterned photoresist is designed. A multilayer structure (20) includes
polysilicon (10), a silicon oxide film (11) and an anti-reflective
film (12) which are deposited sequentially in the order noted, and a photoresist
(13) is provided on the anti-reflective film (12), so that light
for exposure is incident on the multilayer structure (20) through the photoresist
(13). First, as a step (i), a range of thickness of the silicon oxide film
(11) is determined so as to allow an absolute value of a reflection coefficient
of the light for exposure at an interface between the anti-reflective film (12)
and the photoresist (13) to be equal to or smaller than a first value. Subsequently,
as a step (ii), the range of thickness of the silicon oxide film (11) determined
in the step (i) is delimited so as to allow an absolute value of a phase of the
reflection coefficient to be equal to or larger than a second value.
