A semiconductor memory device includes a semiconductor substrate and a support
layer provided above the semiconductor substrate. Particles are formed on the support
layer. A first electrode is provided on the support layer such that it covers the
particles. The first electrode has a first interface located opposite to the particles
and being wavy in accordance with the pattern of the particles. A capacitor insulation
film is provided on the first interface. The capacitor insulation film has a second
interface located opposite to the first interface and being wavy in accordance
with the shape of the first interface. A second electrode is provided on the capacitor
insulation film.
