There is disclosed is a semiconductor device which comprises a semiconductor
substrate, isolation regions formed within the semiconductor substrate to define
the active region, a pair of impurity diffusion regions formed within the element
region in a manner to have surfaces elevated from the isolation region, a SiGe
film formed on an upper surface of the impurity diffusion region so as to cover
partly the side surface of the impurity diffusion region, a Ge concentration in
the SiGe film being higher at a lower surface of the SiGe film than at an upper
surface of the SiGe film, a metal silicide layer formed on the SiGe film, and a
gate electrode formed in the active region of the semiconductor substrate with
a gate insulating film interposed therebetween and having a sidewall insulating
film formed on the side surface.
