Monoatomic and monocrystalline layer of large size, in diamond type carbon,
and method for the manufacture of this layer.
According to the invention, a monocrystalline substrate (2) is formed
in SiC terminated by an atomic plane of carbon according to a reconstruction c(22)
and at least one annealing is carried out, capable of transforming this atomic
plane, which is a plane of dimers CC (4) of sp configuration, into a plane
of dimers C-C (8) of sp3 configuration. Application to microelectronics,
optics, optoelectronics, micromechanics and biomaterials.
