There is described a back thinned sensor in which a material is added on the front surface to extend the wavelength of the sensor into wavelengths it normally does not reach. In the preferred embodiment, the back-thinned layer comprises silicon and is the base for a CMOS device or a CCD. The photocathode in a night vision device comprises in the preferred unit GaAs.


< Electronic package of photo-image sensors in cellular phone camera modules, and the fabrication and assembly thereof

< Electronic package having a patterned layer on backside of its substrate, and the fabrication thereof

> Semiconductor device including bipolar transistor and buried conductive region

> Thin-film solar cells

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