The present invention provides, in one embodiment, a transistor (100). The transistor (100) comprises a doped semiconductor substrate (105) and a drain-extended well (115) having a curved region (125) and a straight region (130) surrounded by the doped semiconductor substrate (105). The drain-extended well (115) has an opposite dopant type as the doped semiconductor substrate (105). The transistor (100) further includes a centered source/drain (120) surrounded by the drain-extended well (115) and separated from an outer perimeter (135) of the drain-extended well (115). A separation in the curved region (145) is greater than a separation in the straight region (150). Other embodiments of the present invention include an integrated circuit (300) and a method of manufacturing a transistor (200).