A semiconductor die package including a semiconductor die including a first
surface, a second surface, and a vertical power MOSFET having a gate
region and a source region at the first surface a drain region at the
second surface. A drain clip having a major surface is electrically
coupled to the drain region. A gate lead is electrically coupled to the
gate region. A source lead is electrically coupled to the source region. A
non-conductive molding material encapsulates the semiconductor die. The
major surface of the drain clip is exposed through the non-conductive
molding material.
