There is provided a semiconductor device comprising: a first plating layer
formed on one surface of an interconnect pattern; a second plating layer
formed within through holes in the interconnect pattern; a semiconductor
chip electrically connected to the first plating layer; an anisotropic
conductive material provided on the first plating layer; and a conductive
material provided on the second plating layer, wherein the first plating
layer has appropriate adhesion properties with the anisotropic conductive
material, and the second plating layer has appropriate adhesion properties
with the conductive material.
