A new type of high-Q variable capacitor includes a substrate, a first electrically
conductive layer fixed to the substrate, a dielectric layer fixed to a portion
of the electrically conductive layer, and a second electrically conductive layer
having an anchor portion and a free portion. The anchor portion is fixed to the
dielectric layer and the free portion is initially fixed to the dielectric layer,
but is released from the dielectric layer to become separated from the dielectric
layer, and wherein an inherent stress profile in the second electrically conductive
layer biases the free portion away from the dielectric layer. When a bias voltage
is applied between the first electrically conductive layer and the second electrically
conductive layer, electrostatic forces in the free portion bend the free portion
towards the first electrically conductive layer, thereby increasing the capacitance
of the capacitor.