A method for forming a conductive feature in a low k dielectric layer comprising a layer of nanotubes and a low k material between the nanotubes is provided. The low k dielectric layer may be deposited on a seed layer as a blanket layer that is patterned such that a conductive feature may be formed in the low k dielectric layer. Alternatively, the low k dielectric layer may be selectively deposited on a patterned seed layer between a sacrificial layer of a substrate. The sacrificial layer may be removed and replaced with conductive material to form a conductive feature in the low k dielectric layer.